bfn 16, bfn 18 oct-27-1999 1 npn silicon high-voltage transistors ? suitable for video output stages in tv sets and switching power supplies ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types: bfn 17, bfn 19 (pnp) 2 1 3 vps05162 2 type marking pin configuration package bfn 16 bfn 18 dd de 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e sot-89 sot-89 maximum ratings parameter symbol bfn 16 bfn 18 unit collector-emitter voltage v ceo 250 300 v collector-base voltage v cbo 250 300 emitter-base voltage v ebo 5 5 dc collector current i c 200 ma i cm 500 peak collector current 100 i b base current peak base current 200 i bm p tot 1 total power dissipation , t s = 130 c w c junction temperature t j 150 storage temperature t stg -65 ... 150 thermal resistance junction ambient 1) r thja 75 k/w junction - soldering point r thjs 20 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bfn 16, bfn 18 oct-27-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 bfn 16 bfn 18 v (br)ceo 250 300 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 bfn 16 bfn 18 v (br)cbo 250 300 - - - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 200 v, i e = 0 v cb = 250 v, i e = 0 bfn 16 bfn 18 i cbo - - - - 100 100 na collector cutoff current v cb = 200 v, i e = 0 , t a = 150 c v cb = 250 v, i e = 0 , t a = 150 c bfn 16 bfn 18 i cbo - - - - 20 20 a emitter cutoff current v eb = 3 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v bfn 16 bfn 18 - - - - - - - - 25 40 40 30 h fe - collector-emitter saturation voltage1) i c = 20 ma, i b = 2 ma bfn 16 bfn 18 v cesat - - v - - 0.4 0.5 base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 1) pulse test: t < 300 s; d < 2%
bfn 16, bfn 18 oct-27-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 10 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 30 v, f = 1 mhz c cb pf - 2.5 -
bfn 16, bfn 18 oct-27-1999 4 operating range i c = f ( v ceo ) t a = 25c, d = 0 ehp00580 bfn 16/18 10 10 v ceo 10 ma c 10 3 1 10 -1 5 10 10 10 0 5 v 5 10 2 0123 555 10 100 1 100 dc ms ms s s total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00579 bfn 16/18 150 50 100 ?c t as t 0.2 0.4 0.6 0.8 1.0 w 1.2 p tot t t ; as permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00581 bfn 16/18 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t collector current i c = f ( v be ) v ce = 10v ehp00582 bfn 16/18 10 0 v be 1.5 ma c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v 5 10 2
bfn 16, bfn 18 oct-27-1999 5 transition frequency f t = f ( i c ) v ce = 10v ehp00583 bfn 16/18 10 10 10 ma f c 10 mhz 10 t 555 0123 10 3 2 10 1 5 collector cutoff current i cbo = f ( t a ) v cb = 200v ehp00584 bfn 16/18 10 0 ? c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3 dc current gain h fe = f ( i c ) v ce = 10v ehp00585 bfn 16/18 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555
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